elektronische bauelemente 2SC4097 32v, 0.5a medium power transistor ? features . high i cmax ( = 0.5ma). . low v ce(sat) . optimal for low voltage operation. . epitaxial planar type. . npn silicon transistor. ? mechanical data . case: sot-323 , molded plastic . terminals: solderable per mil-std-202, method 208 . polarity: see diagrams below . mounting p osition: a ny ? absolute maximum ratings rating 25 ambient temperature unless otherwise specified. single phase half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. type number symbol limits unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5 v collector current i c 0.5 a (note) collector power dissipation p c 0.2 w operating temperature t j 150 : storage temperature range t stg -55 ~ +150 : note: p c must not be exceeded. http://www.secosgmbh.com/ any changing of specification will not be informed individual r o h s c o m p l i a n t p r o d u c t 2. base 1.emitter 3. collector k j c h l a b s g v dim min max a 1.800 2.20 0 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1 .400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0 .720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 d top view 01 -jun-2002 rev. a page 1 of 3
elektronische bauelemente 2SC4097 32v, 0.5a medium power transistor ? electrical characteristics (ta = 25 : ) type number symbol min. typ. max. unit test conditions collector-base breakdown voltage bv cbo 40 - - v i c = 100 a collector-emitter breakdown voltage bv ceo 32 - - v i c = 1 ma emitter-base breakdown voltage bv ebo 5 - - v i e = 100 a collector cutoff current i cbo - - 1 a v cb = 20 v emitter cutoff current i ebo - - 1 a v eb = 4 v collector-emitter saturation voltage v ce (sat) - - 0.4 v i c / i b = 500 ma / 50 ma dc current transfer ratio h fe 82 - 390 - v ce = 3 v, i c = 100 ma v ce = 5 v, i e = -20 ma, transition frequency f t - 250 - mhz f = 100 mhz v cb = 10 v, i e = 0 a, output capacitance cob - 6.0 - pf f = 1 mhz ? h fe values are classified as follows: item p q r h fe 82 ~ 180 120 ~ 270 180 ~ 390 marking cp cq cr ? electrical characteristic curves http://www.secosgmbh.com/ any changing of specification will not be informed individual 0.8 0.2 0.4 0.9 0.7 0.5 1.1 0.3 1.0 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 ta 100 25 80 25 55 v ce 6v collector current : i c ( ma) base to emitter voltage : v be ( v) fig.1 grounded emitter propagation characteristics 1 0 2345 0 100 50 0.50ma 0.4 5ma 0 .40ma 0.35ma 0.30ma 0.25ma 0 .2 0 ma 0.15m a 0 .1 0 ma 0.05m a i b = 0a ta = 25 collector current : i c ( ma) collector to emitter voltage : v ce ( v) fig.2 grounded emitter output characteristics() 1 0 2345 0 500 400 300 200 100 2ma 1.8ma 1.6ma 1.4ma 1.2ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma i b = 0a ta = 25 collector current : i c ( ma) collector to emitter voltage : v ce ( v) fig.3 grounded emitter output characteristics() : : : : : : : = = - - 01-jun-2002 rev. a page 2 of 3
elektronische bauelemente 2SC4097 32v, 0.5a medium power transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual 0.5 1 2 5 10 20 50 100 1000 200 500 0.2 0.5 1 0.02 0.05 0.1 ta = 25 l c /l b = 10 collector saturation voltage : v ce(sat) ( v) collector current : i c ( ma) fig.4 collector-emitter saturation voltage vs. collector current 5001000 0.1 200 10 0.2 50 100 0.5 20 12 5 20 10 50 100 200 500 1000 dc current gain : h fe collector current : i c ( ma) ta = 100 75 50 25 -25 -50 v ce = 3v fig.5 dc current gain vs. collector current fig. 6 gain bandwidth product vs. emitter current emitter current : i e ( ma) transition frequency : f t ( mhz) ta = 25 v ce = 5v 0.5 1 2 5 10 20 50 50 100 200 500 0.5125102050 5 2 10 20 50 cib cob ta = 25 f = 1mhz i e = 0a i c = 0a collector to base voltage : v cb ( v) emitter to base voltage : v eb ( v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage : : : : : 0 : : : : : 01-un-2002 rev. a page 3 of 3
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